Cover for Advances in Semiconductor Nanostructures

Advances in Semiconductor Nanostructures

Growth, Characterization, Properties and Applications

Book2017

Edited by:

Alexander V. Latyshev, Anatoliy V. Dvurechenskii and Alexander L. Aseev

Advances in Semiconductor Nanostructures

Growth, Characterization, Properties and Applications

Book2017

 

Cover for Advances in Semiconductor Nanostructures

Edited by:

Alexander V. Latyshev, Anatoliy V. Dvurechenskii and Alexander L. Aseev

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Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth an ... read full description

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    Index

    Pages 521-527

About the book

Description

Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena.

The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research.

Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena.

The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research.

Key Features

  • Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures
  • Covers recent developments in the field from all over the world
  • Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries
  • Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures
  • Covers recent developments in the field from all over the world
  • Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries

Details

ISBN

978-0-12-810512-2

Language

English

Published

2017

Copyright

Copyright © 2017 Elsevier Inc. All rights reserved.

Imprint

Elsevier

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Editors

Alexander V. Latyshev

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia

Novosibirsk State University, Novosibirsk, Russia

Anatoliy V. Dvurechenskii

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia

Novosibirsk State University, Novosibirsk, Russia

Alexander L. Aseev

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia